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US Patent Issued to SK hynix on July 7 for "Memory including memory cells having different sizes" (South Korean Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,419, issued on July 7, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Memory including memory cells having different sizes" was ... Read More


US Patent Issued to Micron Technology on July 7 for "Single crystal silicon cores for stacked memory cells" (Idaho Inventor)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,420, issued on July 7, was assigned to Micron Technology Inc. (Bosie, Idaho). "Single crystal silicon cores for stacked memory cells" was in... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 7 for "Memory structure including a plurality of transistors connected to a storage element" (Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,421, issued on July 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Memory structure including a plur... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 7 for "Three-dimensional ferroelectric memory devices" (South Korean Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,422, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Three-dimensional ferroelectric memory devices... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 7 for "Compute-in-memory device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,423, issued on July 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Compute-in-memory device and meth... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 7 for "Three-dimensional ferroelectric memory device" (South Korean Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,424, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd.. "Three-dimensional ferroelectric memory device" was invented by Jinseon... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on July 7 for "3D stackable memory and methods of manufacture" (Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,425, issued on July 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "3D stackable memory and methods of ma... Read More


US Patent Issued to NANYA TECHNOLOGY on July 7 for "Semiconductor device structure" (Taiwanese Inventor)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,426, issued on July 7, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device structure" was invented by Sh... Read More


US Patent Issued to GlobalFoundries Singapore on July 7 for "Electronic device with galvanic isolation and integration methods" (Singaporean Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,427, issued on July 7, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore). "Electronic device with galvanic isolation and integ... Read More


US Patent Issued to International Business Machines on July 7 for "Metal insulator metal capacitor (MIM capacitor)" (New York, Connecticut, Vermont Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,428, issued on July 7, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Metal insulator metal capacitor (MIM capacitor... Read More